ANU-1 · Maskless Thermal Lithography

Meet the
ANU-1

ANU-1 is a maskless optical lithography tool built on Nabu's parallel thermal projection platform. It writes patterns directly from a virtual mask, so chip designers can prototype and move into mid-volume production on the same tool, with no photomask cost or lead time.

180 nm

half-pitch resolution

10 WPH

throughput, 4 in wafers

4 / 6 / 8 in

wafer sizes

01

Key differentiators

No photomask

Designs load as a virtual mask from GDSII or OASIS. A design change goes from file to wafer with no re-tooling.

Thermal resist

Thermally activated resists give sub-wavelength features and immunity to beam imperfections, for higher resolution and yield.

Parallel writing

Massively parallel laser writing is up to 100× faster than conventional direct laser writers. Write speed does not depend on design complexity or resolution.

Fits standard cleanroom processes

Resist is deposited by standard DC or RF sputtering. Developing, etching and lift-off work just as they do with conventional photoresist.

Verify before developing

Patterns can be checked before the wafer is developed. On transparent substrates, features are visible in real time during writing.

Simple facility requirements

No yellow-light room, three-phase power, nitrogen line or water line is required.

02

Technical specifications

Parameter

ANU-1 today

Roadmap

Resolution

180 nm half-pitch

Sub-100 nm, in lab testing

Alignment

~100 nm

Sub-50 nm

Throughput

10 wafers / hour (4 in)

50 wafers / hour

Exposure source

532 nm

266 nm

Line edge roughness

< 20 nm

—

Wafer sizes

4 in, 6 in, 8 in

—

Substrates

Substrate-agnostic

—

Patterning

Maskless direct write from virtual mask; GDSII / OASIS input

—

Resist

Thermal resist, Spin coated,  DC or RF sputter-deposited,

—

Write speed

Independent of design complexity and resolution

—

Cameras

Lens alignment ×1, layer alignment ×4

—

Autofocus

Automatic

—

Warp / bow compensation

Instantaneous up to 20 µm; up to 100 µm max

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03

Write fields

Field

Area

Exposure

Single field

100 × 100 mm²

6 min

4 in wafer

Ø 100 mm

6 min

6 in wafer

Ø 150 mm

6 min

04

Facility

Requirement

ANU-1

Footprint (W × D × H)

3.5 × 3.5 × 7 ft

Yellow-light room

Not required

Three-phase power

Not required

Nitrogen line

Not required

Water line

Not required

Request a demo or quote

Sample process results are available on request.

johnathan@nabulitho.com · +1 262 646 0177

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